Rambus today announced it has achieved a new breakthrough level of power efficiency with its latest silicon test vehicle developed through its Mobile Memory Initiative (MMI). Launched in February 2009, Rambus’ MMI focuses on achieving high bandwidth at extremely low power to enable advanced applications in next-generation smartphones, netbooks, portable gaming and portable media products. Operating at 4.3Gbps, a memory system using MMI innovations can deliver over 17GB/s of memory bandwidth from a single mobile DRAM device.
“The performance demands of next-generation mobile devices are vastly outstripping the pace of battery technology improvements,” said Martin Scott, senior vice president of Research and Technology Development at Rambus. “With the innovations developed through our Mobile Memory Initiative, we can deliver advanced applications and maintain long battery life through our breakthroughs in both bandwidth performance and power efficiency.”
The company will discuss its approach to solving mobile memory challenges during a presentation by Judy Chen at the ARM TechCon3 on October 22, 4:00 – 4:45 p.m. PT at the Santa Clara Convention Center.
