Intel, Micron Introduce 25-Nanometer NAND

Intel and Micron today announced the world’s first 25-nanometer (nm) NAND technology, which is able to produce 8 gigabytes (GB) of storage in a single NAND device, creating a high-capacity storage solution for today’s tiny consumer gadgets. It measures just 167mm2 — small enough to fit through the hole in the middle of a compact disc (CD), yet packs more than 10 times the data capacity of that CD (a standard CD holds 700 megabytes of data).

NAND flash memory stores data and other media contained in consumer electronics products, retaining information even when the power is turned off. The drive toward smaller NAND processes enables the continued development and introduction of new uses for the technology.

“To lead the entire semiconductor industry with the most advanced process technology is a phenomenal feat for Intel and Micron, and we look forward to further pushing the scaling limits,” said Brian Shirley, vice president of Micron’s memory group. “This production technology will enable significant benefits to our customers through higher density media solutions.”

The 25nm, 8GB device is sampling now and is expected to enter mass production in the second quarter of 2010. The new 25nm 8GB device reduces chip count by 50 percent compared to previous process generations, allowing for smaller, yet higher density designs and greater cost efficiencies. For example, a 256GB solid-state drive (SSD) can now be enabled with just 32 of these devices (versus 64 previously), a 32GB smartphone needs just four, and a 16GB flash card requires only two.

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