Micron and Intel today announced they are sampling the NAND flash memory built on industry-leading 50 nanometer (nm) process technology. Both companies are sampling 4 gigabit (Gb) devices now, with plans to mass produce a range of densities on the 50nm node in 2007.

This move to 50nm process technology will enable Intel and Micron to meet the growing demand for higher density NAND flash across a range of computing and consumer electronics applications such as digital music players, removable storage and handheld communications devices.

"Our entry into the NAND flash business has been an incredibly fast ramp," said Brian Harrison, vice president and general manager, Flash Memory Group, Intel. "We started shipping products to customers in the first quarter of this year, and we're seeing very high demand across multiple flash densities. Working with Micron, we are poised to transition quickly to the 50 nm process technology and beyond."