SAMSUNG Introduces Industry's First 60-Nanometer 8-Gb NAND Flash Memory

SAMSUNG Introduces Industry's First 60-Nanometer 8-Gb NAND Flash Memory


Last update: 21-09-04	Submitted by ahbao
Views: 4943	Home Gadgets News

Samsung Electronics announced today that it has developed the industry's first 60-nanometer (nm) 8-Gigabit (Gb) NAND Flash memory device for data storage medium such as low density mobile hard disks for mobile appliances.

"NAND flash technology development continues to double density growth on an average of every 12 months," said Dr. Chang Gyu Hwang, president and CEO of Samsung Electronics' Semiconductor business. Verifying the New Memory Growth Model he first presented at the ISSCC's 2001conference, Dr. Hwang said the industry has seen densities grow from 256 Megabit (Mb) in 1999, to 512Mb in 2000, 1Gb in 2001, 2Gb in 2002, 4Gb in 2003 and now 8Gb in 2004.

The new 8Gb MLC NAND flash memory broadens the company's flash memory portfolio, meeting increasing market demand for efficient and cost effective non volatile storage devices. MLC technology also offers designers a competitive choice for low power, small form factor storage solutions that enable low density mobile internal hard disks (HDD) for compact mobile applications.

The 8Gb NAND flash memory will allow designs of up to 16Gigabytes (GB) of storage on a single memory card. That 16GBs of memory translates into storage of up to 16 hours of DVD quality video or 4,000 (five minutes per song) MP3 audio files.

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